View MUN5114DW1T1_8710350.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

? semiconductor components industries, llc, 2003 december, 2003 ? rev. 5 1 publication order number: mun5111dw1t1/d mun5111dw1t1 series preferred devices dual bias resistor transistors pnp silicon surface mount transistors with monolithic bias resistor network the brt (bias resistor transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base?emitter resistor. these digital transistors are designed to replace a single device and its external resistor bias network. the brt eliminates these individual components by integrating them into a single device. in the mun5111dw1t1 series, two brt devices are housed in the sot?363 package which is ideal for low?power surface mount applications where board space is at a premium. ? simplifies circuit design ? reduces board space ? reduces component count ? available in 8 mm, 7 inch/3000 unit tape and reel maximum ratings (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) rating symbol value unit collector-base voltage v cbo ?50 vdc collector-emitter voltage v ceo ?50 vdc collector current i c ?100 madc thermal characteristics characteristic (one junction heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 187 (note 1.) 256 (note 2.) 1.5 (note 1.) 2.0 (note 2.) mw mw/ c thermal resistance ? junction-to-ambient r q ja 670 (note 1.) 490 (note 2.) c/w characteristic (both junctions heated) symbol max unit total device dissipation t a = 25 c derate above 25 c p d 250 (note 1.) 385 (note 2.) 2.0 (note 1.) 3.0 (note 2.) mw mw/ c thermal resistance ? junction-to-ambient r q ja 493 (note 1.) 325 (note 2.) c/w thermal resistance ? junction-to-lead r q jl 188 (note 1.) 208 (note 2.) c/w junction and storage temperature range t j , t stg ?55 to +150 c 1. fr?4 @ minimum pad 2. fr?4 @ 1.0 x 1.0 inch pad preferred devices are recommended choices for future use and best overall value. device marking information see specific marking information in the device marking table on page 2 of this data sheet. q 1 r 1 r 2 r 2 r 1 q 2 (1) (2) (3) (4) (5) (6) http://onsemi.com sot?363 case 419b style 1 marking diagram 1 6 xx d xx = specific device code d = date code = (see page 2) 1 6
mun5111dw1t1 series http://onsemi.com 2 device marking and resistor values device package marking r1 (k) r2 (k) shipping mun5111dw1t1 sot?363 0a 10 10 3000/tape & reel mun5112dw1t1 sot?363 0b 22 22 3000/tape & reel mun5113dw1t1 sot?363 0c 47 47 3000/tape & reel MUN5114DW1T1 sot?363 0d 10 47 3000/tape & reel mun5115dw1t1 sot?363 0e 10 3000/tape & reel mun5116dw1t1 sot?363 0f 4.7 3000/tape & reel mun5130dw1t1 sot?363 0g 1.0 1.0 3000/tape & reel mun5131dw1t1 sot?363 0h 2.2 2.2 3000/tape & reel mun5132dw1t1 sot?363 0j 4.7 4.7 3000/tape & reel mun5133dw1t1 sot?363 0k 4.7 47 3000/tape & reel mun5134dw1t1 sot?363 0l 22 47 3000/tape & reel mun5135dw1t1 sot?363 0m 2.2 47 3000/tape & reel mun5136dw1t1 sot?363 0n 100 100 3000/tape & reel mun5137dw1t1 sot?363 0p 47 22 3000/tape & reel electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) characteristic symbol min typ max unit off characteristics collector-base cutoff current (v cb = ?50 v, i e = 0) i cbo ? ? ?100 nadc collector-emitter cutoff current (v ce = ?50 v, i b = 0) i ceo ? ? ?500 nadc emitter-base cutoff current mun5111dw1t1 (v eb = ?6.0 v, i c = 0) mun5112dw1t1 mun5113dw1t1 MUN5114DW1T1 mun5115dw1t1 mun5116dw1t1 mun5130dw1t1 mun5131dw1t1 mun5132dw1t1 mun5133dw1t1 mun5134dw1t1 mun5135dw1t1 mun5136dw1t1 mun5137dw1t1 i ebo ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?0.5 ?0.2 ?0.1 ?0.2 ?0.9 ?1.9 ?4.3 ?2.3 ?1.5 ?0.18 ?0.13 ?0.2 ?0.05 ?0.13 madc collector-base breakdown voltage (i c = ?10 m a, i e = 0) v (br)cbo ?50 ? ? vdc collector-emitter breakdown voltage (note 3.) (i c = ?2.0 ma, i b = 0) v (br)ceo ?50 ? ? vdc on characteristics (note 3.) collector-emitter saturation voltage (i c = ?10 ma, i e = ?0.3 ma) (i c = ?10 ma, i b = ?5 ma) mun5130dw1t1/mun5131dw1t1 (i c = ?10 ma, i b = ?1 ma) mun5115dw1t1/mun5116dw1t1 mun5132dw1t1/mun5133dw1t1/mun5134dw1t1 v ce(sat) ? ? ?0.25 vdc 3. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun5111dw1t1 series http://onsemi.com 3 electrical characteristics (t a = 25 c unless otherwise noted, common for q 1 and q 2 ) (continued) characteristic symbol min typ max unit on characteristics (note 4.) (continued) dc current gain mun5111dw1t1 (v ce = ?10 v, i c = ?5.0 ma) mun5112dw1t1 mun5113dw1t1 MUN5114DW1T1 mun5115dw1t1 mun5116dw1t1 mun5130dw1t1 mun5131dw1t1 mun5132dw1t1 mun5133dw1t1 mun5134dw1t1 mun5135dw1t1 mun5136dw1t1 mun5137dw1t1 h fe 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 250 250 5.0 15 27 140 130 140 130 140 ? ? ? ? ? ? ? ? ? ? ? ? ? ? output voltage (on) (v cc = ?5.0 v, v b = ?2.5 v, r l = 1.0 k w ) mun5111dw1t1 mun5112dw1t1 MUN5114DW1T1 mun5115dw1t1 mun5116dw1t1 mun5130dw1t1 mun5131dw1t1 mun5132dw1t1 mun5133dw1t1 mun5134dw1t1 mun5135dw1t1 (v cc = ?5.0 v, v b = ?3.5 v, r l = 1.0 k w ) mun5113dw1t1 (v cc = ?5.0 v, v b = ?5.5 v, r l = 1.0 k w ) mun5136dw1t1 (v cc = ?5.0 v, v b = ?4.0 v, r l = 1.0 k w ) mun5137dw1t1 v ol ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 ?0.2 vdc output voltage (off) (v cc = ?5.0 v, v b = ?0.5 v, r l = 1.0 k w ) (v cc = ?5.0 v, v b = ?0.05 v, r l = 1.0 k w ) mun5130dw1t1 (v cc = ?5.0 v, v b = ? 0.25 v, r l = 1.0 k w ) mun5115dw1t1 mun5116dw1t1 mun5131dw1t1 mun5133dw1t1 v oh ?4.9 ? ? vdc input resistor mun5111dw1t1 mun5112dw1t1 mun5113dw1t1 MUN5114DW1T1 mun5115dw1t1 mun5116dw1t1 mun5130dw1t1 mun5131dw1t1 mun5132dw1t1 mun5133dw1t1 mun5134dw1t1 mun5135dw1t1 mun5136dw1t1 mun5137dw1t1 r 1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k w resistor ratio mun5111dw1t1/mun5112dw1t1/ mun5113dw1t1/mun5136dw1t1 MUN5114DW1T1 mun5115dw1t1/mun5116dw1t1 mun5130dw1t1/mun5131dw1t1/mun5132dw1t1 mun5133dw1t1 mun5134dw1t1 mun5135dw1t1 mun5137dw1t1 r 1 /r 2 0.8 0.17 ? 0.8 0.055 0.38 0.038 1.7 1.0 0.21 ? 1.0 0.1 0.47 0.047 2.1 1.2 0.25 ? 1.2 0.185 0.56 0.056 2.6 4. pulse test: pulse width < 300 m s, duty cycle < 2.0%
mun5111dw1t1 series http://onsemi.com 4 figure 1. derating curve ? all devices 300 200 150 100 50 0 ?50 0 50 100 150 t a , ambient temperature ( c) r q ja = 490 c/w 250 p d , power dissipation (mw) all mun5111dw1t1 series devices
mun5111dw1t1 series http://onsemi.com 5 typical electrical characteristics e mun5111dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 2. v ce(sat) versus i c 100 10 1 0.1 0.01 0.001 0 v in , input voltage (volts) t a =-25 c 25 c 1 2 3 4 5 6 7 8 9 10 figure 3. dc current gain figure 4. output capacitance figure 5. output current versus input voltage figure 6. input voltage versus output current 0.01 20 i c , collector current (ma) v ce(sat) , collector voltage (volts) 0.1 1 0 40 50 1000 1 10 100 i c , collector current (ma) t a =75 c -25 c 100 10 0 i c , collector current (ma) 0.1 1 10 100 10 20 30 40 50 t a =-25 c 25 c 75 c 75 c i c /i b = 10 50 010203040 4 3 1 2 v r , reverse bias voltage (volts) c ob , capacitance (pf) 0 t a =-25 c 25 c 75 c 25 c v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 6 typical electrical characteristics e mun5112dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 7. v ce(sat) versus i c figure 8. dc current gain 1000 10 i c , collector current (ma) 100 10 1 100 figure 9. output capacitance i c , collector current (ma) 0 10 20 30 v o = 0.2 v t a =-25 c 75 c 100 10 1 0.1 40 50 figure 10. output current versus input voltage 100 10 1 0.1 0.01 0.001 0 1 2 3 4 v in , input voltage (volts) 5 6 7 8 9 10 figure 11. input voltage versus output current 0.01 0.1 1 10 40 i c , collector current (ma) 0 20 50 75 c 25 c t a =-25 c 50 010 203040 4 3 2 1 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 25 c i c /i b = 10 25 c -25 c v ce = 10 v t a =75 c f = 1 mhz l e = 0 v t a = 25 c 75 c 25 c t a =-25 c v o = 5 v v ce(sat) , collector voltage (volts)
mun5111dw1t1 series http://onsemi.com 7 typical electrical characteristics e mun5113dw1t1 v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 12. v ce(sat) versus i c i c , collector current (ma) 1 0.1 0.01 010203040 75 c 25 c figure 13. dc current gain 1000 100 10 1 10 100 i c , collector current (ma) -25 c figure 14. output capacitance figure 15. output current versus input voltage 100 10 1 0.1 0.01 0.001 010 25 c v in , input voltage (volts) -25 c 50 010203040 1 0.8 0.6 0.4 0.2 0 v r , reverse bias voltage (volts) c ob , capacitance (pf) 123456 789 figure 16. input voltage versus output current 100 10 1 0.1 0 10 20 30 40 i c , collector current (ma) t a =-25 c 25 c 75 c 50 i c /i b = 10 t a =-25 c 25 c t a =75 c f = 1 mhz l e = 0 v t a = 25 c v o = 5 v t a =75 c v o = 0.2 v v ce(sat) , collector voltage (volts) v ce = 10 v
mun5111dw1t1 series http://onsemi.com 8 typical electrical characteristics e MUN5114DW1T1 10 1 0.1 010 20 30 4050 100 10 1 0 246810 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 2 4 6 8101520253035404550 v r , reverse bias voltage (volts) v in , input voltage (volts) i c , collector current (ma) h fe , dc current gain (normalized) figure 17. v ce(sat) versus i c i c , collector current (ma) 020406080 figure 18. dc current gain 1 10 100 i c , collector current (ma) figure 19. output capacitance figure 20. output current versus input voltage v in , input voltage (volts) c ob , capacitance (pf) figure 21. input voltage versus output current i c , collector current (ma) 1 0.1 0.01 0.001 -25 c 25 c t a =75 c v ce = 10 v 180 160 140 120 100 80 60 40 20 0 2 4 6 8 15 20 40 50 60 70 80 90 f = 1 mhz l e = 0 v t a = 25 c 25 c i c /i b = 10 t a =-25 c t a =75 c 25 c -25 c v o = 5 v v o = 0.2 v 25 c t a =-25 c 75 c 75 c v ce(sat) , collector voltage (volts)
mun5111dw1t1 series http://onsemi.com 9 typical electrical characteristics e mun5115dw1t1 75 c 25 c ?25 c figure 22. v ce(sat) versus i c figure 23. dc current gain figure 24. output capacitance figure 25. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 26. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 10 typical electrical characteristics e mun5116dw1t1 75 c 25 c ?25 c figure 27. v ce(sat) versus i c figure 28. dc current gain figure 29. output capacitance figure 30. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 31. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 11 typical electrical characteristics e mun5130dw1t1 75 c 25 c ?25 c figure 32. v ce(sat) versus i c figure 33. dc current gain figure 34. output capacitance figure 35. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 36. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain c ob , capacitance (pf) 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 0.01 0.1 tbd i c /i b = 10 v ce = 10 v v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 12 typical electrical characteristics e mun5131dw1t1 75 c 25 c ?25 c figure 37. v ce(sat) versus i c figure 38. dc current gain figure 39. output capacitance figure 40. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 41. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 12 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 10 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 15 10 5 0 0.1 1 20 25 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 13 typical electrical characteristics e mun5132dw1t1 75 c 25 c ?25 c figure 42. v ce(sat) versus i c figure 43. dc current gain figure 44. output capacitance figure 45. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 46. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 14 typical electrical characteristics e mun5133dw1t1 75 c 25 c ?25 c figure 47. v ce(sat) versus i c figure 48. dc current gain figure 49. output capacitance figure 50. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 51. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 5 1 3 7 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 15 typical electrical characteristics e mun5134dw1t1 75 c 25 c ?25 c figure 52. v ce(sat) versus i c figure 53. dc current gain figure 54. output capacitance figure 55. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 56. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 3 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 1 2 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 100 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 2.5 0.5 1.5 3.5 10 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 16 typical electrical characteristics e mun5135dw1t1 75 c 25 c ?25 c figure 57. v ce(sat) versus i c figure 58. dc current gain figure 59. output capacitance figure 60. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 61. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 50 40 20 10 0 i c , collector current (ma) 100 10 1 100 10 1 0.001 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain 6 45 50 40 30 20 10 0 0 c ob , capacitance (pf) 2 4 8 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 10 9 8 7 10 30 20 10 0 0.1 1 40 50 v in , input voltage (volts) 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 75 c 25 c t a = ?25 c 0.01 35 25 15 5 0.01 0.1 30 10 12 i c /i b = 10 v ce = 10 v f = 1 mhz l e = 0 v t a = 25 c v o = 5 v v o = 0.2 v
mun5111dw1t1 series http://onsemi.com 17 typical electrical characteristics e mun5136dw1t1 75 c 25 c ?25 c figure 62. v ce(sat) versus i c figure 63. dc current gain figure 64. output capacitance figure 65. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 66. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 7 6 5 4 3 2 1 0 i c , collector current (ma) 100 10 1 100 10 1 0.01 1000 v ce(sat) , collector voltage (volts) h fe , dc current gain (normalized) 1.2 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.1 1 10 i c , collector current (ma) 10 9 8 7 100 12 10 8 6 4 2 0 1 10 18 16 14 20 v in , input voltage (volts) i c /i b = 10 75 c 25 c t a = ?25 c v ce = 10 v 75 c 25 c t a = ?25 c v o = 5 v v o = 0.2 v 75 c 25 c t a = ?25 c f = 1 mhz i e = 0 v t a = 25 c v o = 5 v
mun5111dw1t1 series http://onsemi.com 18 typical electrical characteristics e mun5137dw1t1 figure 67. v ce(sat) versus i c figure 68. dc current gain figure 69. output capacitance figure 70. output current versus input voltage v in , input voltage (volts) v r , reverse bias voltage (volts) figure 71. input voltage versus output current i c , collector current (ma) i c , collector current (ma) 1 0.1 35 30 25 20 15 10 5 0 i c , collector current (ma) 100 10 1 100 10 0.01 1000 h fe , dc current gain (normalized) 1.4 0.6 60 50 40 30 20 10 0 0 c ob , capacitance (pf) 0.2 0.4 0.8 1.0 100 6 5 4 3 2 1 0 0.001 1 10 i c , collector current (ma) 11 9 8 7 100 15 10 5 0 1 10 20 25 v in , input voltage (volts) 50 45 40 0.1 0.01 10 1.2 f = 1 mhz i e = 0 v t a = 25 c 75 c 25 c t a = ?25 c v o = 5 v 75 c 25 c t a = ?25 c v o = 0.2 v 75 c 25 c t a = ?25 c i c /i b = 10 v ce = 10 v 75 c 25 c t a = ?25 c v ce(sat) , collector voltage (volts)
mun5111dw1t1 series http://onsemi.com 19 package dimensions sc?88 (sot?363 ) case 419b?02 issue t style 1: pin 1. emitter 2 2. base 2 3. collector 1 4. emitter 1 5. base 1 6. collector 2 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b?01 obsolete, new standard 419b?02. dim a min max min max millimeters 1.80 2.20 0.071 0.087 inches b 1.15 1.35 0.045 0.053 c 0.80 1.10 0.031 0.043 d 0.10 0.30 0.004 0.012 g 0.65 bsc 0.026 bsc h ??? 0.10 ??? 0.004 j 0.10 0.25 0.004 0.010 k 0.10 0.30 0.004 0.012 n 0.20 ref 0.008 ref s 2.00 2.20 0.079 0.087 b 0.2 (0.008) mm 123 a g s h c n j k 654 ?b? d 6 pl mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb?free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint*
mun5111dw1t1 series http://onsemi.com 20 on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800?282?9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2?9?1 kamimeguro, meguro?ku, tokyo, japan 153?0051 phone : 81?3?5773?3850 mun5111dw1t1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.

▲Up To Search▲

Price & Availability of MUN5114DW1T1

	To Download MUN5114DW1T1 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .